| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a technique capable of suppressing an increase in manufacturing costs. <P>SOLUTION: A method for manufacturing a semiconductor device comprises the steps of: (a) forming a drift layer 2, an oxide film 31, and a resist 32 in this order on an SiC substrate 1 having an off angle; (b) forming a first opening 31a on the oxide film 31 and forming a second opening 32b on the resist 32; and (c) forming a p-type well region 3 in the upper part of the drift layer 2 by ion-implanting an impurity into the drift layer 2 via the oxide film 31 and the resist 32. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
