FLASH MEMORY STRUCTURE AND METHOD OF FORMING THE SAME

摘要

The present invention relates to a flash memory structure and a forming method thereof. Provided are embodiments of mechanisms of a semiconductor device structure. The semiconductor device structure comprises: a substrate; and word line cells displaced on the substrate. The semiconductor device structure further comprises: memory gates which are displaced on the substrate and are adjacent to the word line cells; and spacers on the sidewalls of the memory gates. The spacers and the word line cells are at the opposite sides of the memory gates. In addition, the angle between top surfaces of the memory gates and sidewalls of the memory gates is in a range from about 75° to 90°.