| 摘要 |
<p>The present invention relates to a semiconductor light emitting device. According to an embodiment, the semiconductor light emitting device includes: a first semiconductor layer on which first and second conductive clad layers, and an active layer are stacked; a second semiconductor layer on which the first and second conductor clad layers, and the active layer are stacked; a single insulating layer which covers a side and a lower side of the first semiconductor layer and a side and a lower side of the second semiconductor layer; a first fluorescent layer which covers the upper side of the first semiconductor layer; and a second fluorescent layer which covers the upper side of the second semiconductor layer.</p> |
