| 摘要 |
<p>1,173,330. Semi-conductor contacts. MATSUSHITA ELECTRONICS CORP. 14 March, 1967 [29 March, 1966], No. 11888/67. Heading H1K. [Also in Division C7] A molybdenum or tungsten ohmic contact on semi-conductor material with a surface impurity concentration of 10<SP>18</SP> cm.<SP>-3</SP> or more is provided by deposition from the hydrogen reduction of a halide of the metal or thermal decomposition of a carbonyl compound of the metal on to the semi-conductor which is at 500‹ C. or less. Fig. 1 shows an N-type 70 ohm-cm. silicon wafer 2 into which phosphorus has been diffused to form N-type region 3 and, after slicing treatment, boron (from boron trioxide suspended in monomethylenestycolethyl) is diffused in to form P-type region 1. Molybdenum films 4 are then applied by supporting the slice on a pedestal 12 (Fig. 2), hydrogen being fed from pipe 17 over a tray 14 of molybdenum pentachloride at 100‹ C. through a heated mesh 19 to deposit the molybdenum film. A gold film is evaporated on to the molybdenum and a copper block 5 thermo compression bonded with a gold foil to the gold. The invention is distinguished from a similar process to provide a Schottky barrier electrode as described in Specification 1,172,230. The semi-conductor material may consist of silicon, germanium or gallium arsenide.</p> |
