SEMICONDUCTOR

摘要

The present invention relates to a semiconductor device to minimize the increase of a leakage current and the reduction of a lifespan. The semiconductor device provided by an embodiment of the present invention includes: a first conductive type drain area which is formed on the upper side of a drain electrode; a second conductive type epilayer which is formed on the upper side of the first conductive type drain area; a third conductive type base area which is formed on a part of the second conductive type epilayer and shares an upper side corresponding to the upper side of the second conductive type epilayer; a fourth conductive type source area which is formed on a part of the third conductive type base area and shares an upper side corresponding to the upper side of the third conductive type base area and the upper side of the second conductive type epilayer; a first insulating layer which is formed to be partially in contact with a part of the upper side of the second conductive type epilayer, a part of the upper side of the third conductive type base area, and a part of the upper side of the fourth conductive type source area; a gate electrode which is formed in a part of the upper side of the first insulating layer; a second insulating layer which surrounds the gate electrode and is in contact with a part of the upper side of the first insulating layer; a source electrode which is formed to be in contact with a part of the upper side of the third conductive type base area, a part of the upper side of the fourth conductive type source area, both lateral sides of the first insulating layer, and the upper side and both lateral sides of the second insulating layers; and a carrier life control impurity area which is formed in a part of the upper side of the drain electrode and includes carrier life control impurities forming a carrier life control area in the first conductive type drain area and the second conductive type epilayer.