SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

Provided are a semiconductor device and a method for fabricating the same. A semiconductor device includes an epitaxial layer of a first conductivity, an anode electrode and a cathode electrode which are separated from each other on the epi layer, a first drift layer of a first conductivity formed in the epi layer, an impurity region of a second conductivity different from the first conductivity, and an island impurity region which is formed in the lower part of a schottky contact region defined by the contact of the anode electrode and the first drift layer.