DEPOSITION METHOD FOR MULTILAYER AND SUBSTRATE PROCESS APPARATUS

摘要

The present invention relates to a composite film deposition method and a substrate processing apparatus. The composite film deposition method alternatively repeats deposition of different thin films on a substrate using plasma generated inside a chamber. The composite film deposition method comprises: a measuring step which measures the value of current for regulating chamber impedance prior to evaporation of each thin film; and an impedance regulating step which regulates the value of the current so that the current value measured in the measuring step can be included within a reference setting range. Therefore, the composite film deposition method can continuously and evenly form different thin films.