| 摘要 |
<p>The performance of a semiconductor device having a memory element is improved. An insulating film (MZ), which is a gate insulating film for a memory element, is formed on a semiconductor substrate (SB), and a gate electrode (MG) for the memory element is formed on the insulating film. The insulating flm has a first insulating film (AOX1), a second insulating film (HSO) thereon, and a third insulating film (AOX2) thereon. The second insulating film (HSO) is a high-dielectric constant insulator film having a charge accumulating function and contains hafnium, silicon, and oxygen. Each of the first insulating film and the third insulating film (AOX 1, 2) has a band gap larger than the band gap of the second insulating film and is formed, for example, from aluminum oxide. An additional interface layer (OX1) may be present between substrate and insulating film.</p> |
