发明名称 |
Light-emitting diodes and fabrication methods thereof |
摘要 |
<p>A light-emitting diode is provided. The light-emitting diode includes an N-type epitaxial layer, a light-emitting layer disposed on a portion of the N-type epitaxial layer to expose a partial surface of the N-type epitaxial layer, and a P-type epitaxial layer disposed on the light-emitting layer, wherein the P-type epitaxial layer has a ladder-shaped sidewall. The light-emitting diode further includes a P-type electrode disposed on the P-type epitaxial layer and an N-type electrode disposed on the exposed surface of the N-type epitaxial layer. Furthermore, a method of fabricating a light-emitting diode is also provided. The method includes performing an anisotropicetching process to a P-type epitaxial layer to form a rounded or a right-angled ladder on the sidewall of the P-type epitaxial layer.</p> |
申请公布号 |
EP2846365(A1) |
申请公布日期 |
2015.03.11 |
申请号 |
EP20140176474 |
申请日期 |
2014.07.10 |
申请人 |
LEXTAR ELECTRONICS CORPORATION |
发明人 |
TSOUO, PO-HUNG;CHOU, TZU-HUNG |
分类号 |
H01L33/20 |
主分类号 |
H01L33/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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