Ion beam processing method and ion beam processing device

摘要

The purpose of the present invention is to provide an ion beam processing method and ion beam processing device which can minimize the deposition of a re-attachment film even for a fine pattern. According to an embodiment of the present invention, an ion beam processing is performed so that the ion beam entering from the direction a pattern groove on a substrate extends produces a larger etching amount than the etching amount produced by the ion beam entering from other directions. Thereby, a re-attachment film is prevented from depositing on the bottom of a fine pattern groove to allow for the fine pattern processing.