Dram with a nanowire access transistor

摘要

A semiconductor nanowire is formed integrally with a wraparound semiconductor portion (30D) that contacts sidewalls of a conductive cap structure (18) located at an upper portion of a deep trench and contacting an inner electrode (16) of a deep trench capacitor. The semiconductor nanowire (30N) is suspended from above a buried insulator layer (20). A gate dielectric layer (32L) is formed on the surfaces of the semiconductor material structure (30P) including the semiconductor nanowire and the wraparound semiconductor portion. A wraparound gate electrode portion (30D) is formed around a center portion of the semiconductor nanowire and gate spacers (52) are formed. Physically exposed portions of the patterned semiconductor material structure are removed, and selective epitaxy and metallization are performed to connect a source-side end of the semiconductor nanowire to the conductive cap structure.