Resistive memory architectures with multiple memory cells per access device

摘要

A resistive memory structure, for example, phase change memory structure, includes one access device and two or more resistive memory cells. Each memory cell is coupled to a rectifying device to prevent parallel leak current from flowing through non-selected memory cells. In an array of resistive memory bit structures, resistive memory cells from different memory bit structures are stacked and share rectifying devices.

主权项

1. A resistive memory structure, comprising:
a plurality of stacked resistive memory cells, each stack including a first and a second resistive memory cell; a common electrode positioned between the first and second resistive memory cells of a stack and electrically coupling the first and second resistive memory cells to a cell select line; and a plurality of access devices, each access device electrically coupled to a first resistive memory cell of a first stack via a first rectifying device and to a second resistive memory of a second stack via a second rectifying device.