Semiconductor device and method of manufacturing the same

摘要

A semiconductor device includes an insulated-gate field-effect transistor which is disposed on a semiconductor substrate having an element formation plane in a (110) plane direction, and which has a channel length direction in a <−110 > direction, and a first element isolation insulation film which is buried in a trench in an element isolation region of the semiconductor substrate and has a positive expansion coefficient, the first element isolation insulation film applying a compressive stress by operation heat to the insulated-gate field-effect transistor in the channel length direction.

主权项

1. A semiconductor device comprising:
an insulated-gate field-effect transistor which is disposed on a semiconductor substrate having an element formation plane in a (110) plane direction, and which has a channel length direction in a <−110 > direction; a first element isolation insulation film which is filled in a trench in an element isolation region of the semiconductor substrate and consists of a SiO2-based material, wherein the SiO2-based material has a positive expansion coefficient under the application of heat, and the insulated-gate field-effect transistor is in a state of compression in the channel length direction as a result of expansion of the first element isolation insulation film due to operation heat of the semiconductor device; and a second element isolation insulation film which is filled in a trench in an element isolation region of the semiconductor substrate and has a negative expansion coefficient, the second element isolation insulation film applying, together with the first element isolation insulation film, a tensile stress by operation heat to the insulated-gate field-effect transistor in two axial directions that are the channel length direction and a channel width direction.