Systems and methods for plasma doping microfeature workpieces

摘要

Systems and methods for plasma doping microfeature workpieces are disclosed herein. In one embodiment, a method of implanting boron ions into a region of a workpiece includes generating a plasma in a chamber, selectively applying a pulsed electrical potential to the workpiece with a duty cycle of between approximately 20 percent and approximately 50 percent, and implanting an ion specie into the region of the workpiece.

主权项

1. A system for implanting boron ions into a region of a semiconductor workpiece, the system comprising:
a plasma chamber; an RF source configured to generate a continuous plasma in the plasma chamber; a workpiece support positioned in the plasma chamber and configured to carry the semiconductor workpiece; a power source operably coupled to the workpiece support for applying a pulsed electrical potential to the semiconductor workpiece; and a controller operably coupled to the power source and to the RF source, the controller having a computer-readable medium containing instructions to perform a method comprising
generating the continuous plasma in the plasma chamber;selectively applying a period of the pulsed electrical potential comprising a series of electrically biased DC pulses alternating with electrically unbiased gaps between the pulses to the semiconductor workpiece, wherein the pulses have a duty cycle of between approximately 10 percent and approximately below 50 percent;implanting at least a boron ion specie from a dopant gas in the chamber into the semiconductor workpiece;depositing at least the boron specie into the semiconductor workpiece during the gaps between the pulses; andetching a portion of the deposited boron specie from the semiconductor workpiece during the pulses.