发明名称 |
Post deposition plasma cleaning system and method |
摘要 |
A method for processing a substrate includes disposing the substrate in a deposition chamber configured to perform a deposition process and depositing a film on the substrate using the deposition process. The substrate having the film thereon is then transferred from the deposition chamber into a treatment chamber and a plasma cleaning process is performed on the substrate in the treatment chamber. Further processing of the substrate is performed after the plasma cleaning process. |
申请公布号 |
US8974868(B2) |
申请公布日期 |
2015.03.10 |
申请号 |
US200511084176 |
申请日期 |
2005.03.21 |
申请人 |
Tokyo Electron Limited |
发明人 |
Ishizaka Tadahiro;Ludviksson Audunn |
分类号 |
H05H1/00;C23C16/455;H01J37/32;C23C16/34;H01L21/768;C23C16/30;H01L21/314;H01L21/285;H01L21/3205;C23C16/14;C23C16/509;H01L21/316;H01L21/318 |
主分类号 |
H05H1/00 |
代理机构 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A method for processing a substrate comprising:
disposing said substrate in a deposition chamber configured to perform a deposition process using plasma, a power of the plasma being varied during the deposition process; depositing a film on said substrate using said deposition process by alternating providing a first process material into the deposition chamber while the plasma is generated with a first power and providing a second process material into the deposition chamber while not providing the first process material and while the plasma is generated with a second power higher than the first power; a first transferring step of transferring said substrate having the film thereon from the deposition chamber into a designated treatment chamber having a slotted plane antenna (SPA); performing a plasma cleaning process on said substrate in said designated treatment chamber; a second transferring step of transferring said substrate to an additional process chamber directly after said plasma cleaning; and performing further processing of said substrate in the additional process chamber. |
地址 |
Tokyo JP |