发明名称 Post deposition plasma cleaning system and method
摘要 A method for processing a substrate includes disposing the substrate in a deposition chamber configured to perform a deposition process and depositing a film on the substrate using the deposition process. The substrate having the film thereon is then transferred from the deposition chamber into a treatment chamber and a plasma cleaning process is performed on the substrate in the treatment chamber. Further processing of the substrate is performed after the plasma cleaning process.
申请公布号 US8974868(B2) 申请公布日期 2015.03.10
申请号 US200511084176 申请日期 2005.03.21
申请人 Tokyo Electron Limited 发明人 Ishizaka Tadahiro;Ludviksson Audunn
分类号 H05H1/00;C23C16/455;H01J37/32;C23C16/34;H01L21/768;C23C16/30;H01L21/314;H01L21/285;H01L21/3205;C23C16/14;C23C16/509;H01L21/316;H01L21/318 主分类号 H05H1/00
代理机构 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A method for processing a substrate comprising: disposing said substrate in a deposition chamber configured to perform a deposition process using plasma, a power of the plasma being varied during the deposition process; depositing a film on said substrate using said deposition process by alternating providing a first process material into the deposition chamber while the plasma is generated with a first power and providing a second process material into the deposition chamber while not providing the first process material and while the plasma is generated with a second power higher than the first power; a first transferring step of transferring said substrate having the film thereon from the deposition chamber into a designated treatment chamber having a slotted plane antenna (SPA); performing a plasma cleaning process on said substrate in said designated treatment chamber; a second transferring step of transferring said substrate to an additional process chamber directly after said plasma cleaning; and performing further processing of said substrate in the additional process chamber.
地址 Tokyo JP