发明名称 |
Wavelength converters for solid state lighting devices, and associated systems and methods |
摘要 |
Wavelength converters for solid state lighting devices, and associated systems and methods. A system in accordance with a particular embodiment includes a solid state radiative semiconductor structure having a first region and a second region. The first region is positioned to receive radiation at a first wavelength and has a first composition and an associated first bandgap energy. The second region is positioned adjacent to the first region to receive energy from the first region and emit radiation at a second wavelength different than the first wavelength. The second region has a second composition different than the first composition, and an associated second bandgap energy that is less than the first bandgap energy. |
申请公布号 |
US8975614(B2) |
申请公布日期 |
2015.03.10 |
申请号 |
US201113215998 |
申请日期 |
2011.08.23 |
申请人 |
Micron Technology, Inc. |
发明人 |
Schubert Martin F.;Odnoblyudov Vladimir |
分类号 |
H01L31/00;H01L33/26;H01L33/50;H01L33/08 |
主分类号 |
H01L31/00 |
代理机构 |
Perkins Coie LLP |
代理人 |
Perkins Coie LLP |
主权项 |
1. A radiation system, comprising:
a solid state radiative semiconductor structure, having:
a stack of at least three absorptive regions positioned to receive radiation at a first wavelength, the absorptive regions each having a corresponding composition and a corresponding associated bandgap energy that decreases step-wise from one absorptive region to its neighbor in a direction away from a source of the radiation; andan emissive region positioned adjacent to the absorptive regions to receive energy from the absorptive regions and emit radiation at a second wavelength different than the first wavelength, the emissive region having a composition different than the composition of any of the absorptive regions, and an associated bandgap energy that is less than the bandgap energies of the absorptive regions. |
地址 |
Boise ID US |