| 发明名称 | Method of sealing two plates with the formation of an ohmic contact therebetween | ||
| 摘要 | A method of sealing a first wafer and a second wafer each made of semiconducting materials, including: implanting a metallic species in at least the first wafer, assembling the first wafer and the second wafer by molecular bonding, and after the molecular bonding, forming a metallic ohmic contact including alloys formed between the implanted metallic species and the semiconducting materials of the first wafer and the second wafer, the metallic ohmic contact being formed at an assembly interface between the first wafer and the second wafer, wherein the forming includes causing the implanted metallic species to diffuse towards the interface between the first wafer with the second wafer and beyond the interface. | ||
| 申请公布号 | US8975156(B2) | 申请公布日期 | 2015.03.10 |
| 申请号 | US200410584052 | 申请日期 | 2004.12.21 |
| 申请人 | Commissariat a l'Energie Atomique | 发明人 | Pocas Stephane;Moriceau Hubert;Michaud Jean-Francois |
| 分类号 | H01L21/00;H01L21/46;H01L21/18;H01L21/265;H01L21/266 | 主分类号 | H01L21/00 |
| 代理机构 | Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A method of sealing a first wafer and a second wafer each made of semiconducting materials, comprising: implanting a metallic species in at least the first wafer at a dose above 1016 species/cm2, assembling the first wafer and the second wafer by molecular bonding, and after the molecular bonding, forming a metallic ohmic contact including alloys formed between the implanted metallic species and the semiconducting materials of the first wafer and the second wafer, said metallic ohmic contact being formed at an assembly interface between the first wafer and the second wafer, wherein the forming includes causing the implanted metallic species to diffuse towards the interface between the first wafer with the second wafer and beyond the interface. | ||
| 地址 | Paris FR | ||