发明名称 |
Plasma processing apparatus, plasma processing method, method for cleaning plasma processing apparatus and pressure control valve for plasma processing apparatus |
摘要 |
A plasma processing apparatus is provided with a first exhaust path which extends downward from an exhaust hole; a second exhaust path which is connected to a downstream end portion of the first exhaust path in the exhausting direction and extends in a direction perpendicular to a direction in which the first exhaust path extends, and whose cross-section, which orthogonally intersects with the exhausting direction, is horizontally long such that a widthwise length is greater than a vertical length in the cross-section; a third exhaust path which is connected to a downstream end portion of the second exhaust path in the exhausting direction and extends in a direction perpendicular to the direction in which the second exhaust path extends; a pump which is connected to a downstream end portion of the third exhaust path in the exhausting direction and depressurizes an inside of a processing container; a pressure control valve which is provided in the second exhaust path, and comprises a pressure control valve plate which is capable of closing the second exhaust path and controls a pressure at upstream and downstream sides in the exhausting direction; and a shut-off valve which is provided in the third exhaust path and comprises a shut-off valve plate which opens and closes the third exhaust path. |
申请公布号 |
US8973527(B2) |
申请公布日期 |
2015.03.10 |
申请号 |
US200913061356 |
申请日期 |
2009.08.27 |
申请人 |
Tokyo Electron Limited |
发明人 |
Nozawa Toshihisa;Komoto Shinji;Iwasaki Masahide |
分类号 |
C23C16/455;C23F1/00;H01L21/306;C23C16/52;H01J37/32;C23C16/44;C23C16/06;C23C16/22 |
主分类号 |
C23C16/455 |
代理机构 |
Cantor Colburn LLP |
代理人 |
Cantor Colburn LLP |
主权项 |
1. A pressure control valve for a plasma processing apparatus for performing plasma processing on a substrate,
the plasma processing apparatus comprising: a processing container; a holding stage disposed inside the processing container and capable of holding the substrate thereon; a pump disposed outside the processing container; an exhaust hole formed under the holding stage in the processing container; an exhaust path extending from the exhaust hole to the pump, wherein the pump is configured to depressurize inside of the processing container and the exhausting path, wherein the exhaust path includes a horizontally linearly extended portion; and a shut-off valve disposed at an end portion of the exhausted path, the shut-off valve opening and closing the exhaust path, wherein the horizontally linearly extended portion of the exhaust path has a rectangular or an oval cross-section having a horizontal length longer than a vertical length; wherein the plasma processing apparatus further includes a pressure control valve disposed in the horizontally linearly extended portion of the exhaust path; wherein the pressure control valve is formed of a pressure control valve plate having substantially same shape and size as those of the cross-section and a shaft formed in the pressure control valve along the horizontal length of the cross-section, in such a manner that the pressure control valve plate rotates about the shaft to thereby control a pressure at upstream and downstream sides of the pressure control valve. |
地址 |
JP |