发明名称 AN APPARATUS OF GROWING A SINGLE CRYSTAL
摘要 <p>The present invention relates to apparatus for growing a single crystal comprising: a chamber; a crucible which is arranged in the chamber and holds a liquid of a melted raw material; a crucible support which is arranged under the crucible and supports the crucible; a first weight sensor measuring the weight of the liquid of a melted raw material in the crucible; a second weight sensor measuring the weight of an ingot growing from the liquid of a melted raw material, and a control unit adding up the weight of the liquid of a melted raw material measured by the first weight sensor and the weight of the ingot measured by the second weight sensor and comparing the calculations with a reference value, and detecting a leakage of the liquid of a melted raw material from the crucible depending on a comparative result. According to the present invention, the leakage of the liquid of a melted raw material from the crucible is automatically detectable in real time, and damage and explosion caused by the liquid of a melted raw material leaked from the crucible can be prevented.</p>
申请公布号 KR20150025374(A) 申请公布日期 2015.03.10
申请号 KR20130102978 申请日期 2013.08.29
申请人 LG SILTRON INCORPORATED 发明人 CHA, HYUN HO;LEE, SANG JUN
分类号 C30B15/20;C30B29/06 主分类号 C30B15/20
代理机构 代理人
主权项
地址