发明名称 Carrier bonding and detaching processes for a semiconductor wafer
摘要 The present invention provides a temporary carrier bonding and detaching process. A first surface of a semiconductor wafer is mounted on a first carrier by a first adhesive, and a first isolation coating is disposed between the first adhesive and the first carrier. Then, a second carrier is mounted on the second surface of the semiconductor wafer. The first carrier is detached. The method of the present invention utilizes the second carrier to support and protect the semiconductor wafer, after which the first carrier is detached. Therefore, the semiconductor wafer will not be damaged or broken, thereby improving the yield rate of the semiconductor process. Furthermore, the simplicity of the detaching method for the first carrier allows for improvement in efficiency of the semiconductor process.
申请公布号 US8975157(B2) 申请公布日期 2015.03.10
申请号 US201213369204 申请日期 2012.02.08
申请人 Advanced Semiconductor Engineering, Inc. 发明人 Hsiao Wei-Min
分类号 H01L21/00 主分类号 H01L21/00
代理机构 Morgan Law Offices, PLC 代理人 Morgan Law Offices, PLC
主权项 1. A method for handling a semiconductor wafer, comprising: attaching a carrier to an active surface of the semiconductor wafer using an adhesive, wherein the adhesive bonds the active surface of the semiconductor wafer to an isolation coating disposed on a surface of the carrier and a portion of the surface of the carrier not having the isolation coating, the adhesive strength of the bond between the active surface of the semiconductor wafer and the isolation coating substantially less than the adhesive strength of the bond between the semiconductor wafer and the portion of the surface of the carrier not having the isolation coating; separating the semiconductor wafer into an inner portion and an outer portion, the carrier requiring substantially less pulling force to be removed from the inner portion than the outer portion; and removing the carrier from the inner portion of the semiconductor wafer.
地址 TW