发明名称 |
Performance-driven and gradient-aware dummy insertion for gradient-sensitive array |
摘要 |
The present disclosure relates to an arrangement and a method of performance-aware buffer zone placement for a high-density array of unit cells. A first feature density of the array is measured and maximum variation for a parameter within a unit cell is determined. A look-up table of silicon data is consulted to predict a buffer zone width and gradient value that achieves a variation that is less than the maximum variation for the unit cell. The look-up table contains a suite of silicon test cases of various array and buffer zone geometries, wherein variation of the parameter within a respective test structure is measured and cataloged for the various buffer zone geometries, and is also extrapolated from the suite of silicon test cases. A buffer zone is placed at the border of the array with a width that is less than or equal to the buffer zone width. |
申请公布号 |
US8978000(B2) |
申请公布日期 |
2015.03.10 |
申请号 |
US201213727691 |
申请日期 |
2012.12.27 |
申请人 |
Taiwan Semiconductor Manufacturing Co. Ltd. |
发明人 |
Huang Mu-Jen;Chen Hsiao-Hui;Lei Cheok-Kei;Chen Po-Tsun;Jiang Yu-Sian |
分类号 |
G06F9/455;G06F17/50;H01L27/02;G03F1/00 |
主分类号 |
G06F9/455 |
代理机构 |
Eschweiler & Associates, LLC |
代理人 |
Eschweiler & Associates, LLC |
主权项 |
1. A method of assembling a layout comprising:
measuring a first density of gate features or source/drain diffusion features within an array of unit cells with a layout tool comprising hardware; measuring a background density of gate features or source/drain diffusion features within background circuitry, which is arranged outside the array with the layout tool; determining a maximum variation for a parameter of a unit cell of the array as a function of a density gradient between the first density and the background density; consulting a look-up table to predict a buffer zone width that achieves a variation of the parameter that is less than the maximum variation; and forming a buffer zone, comprising a width that is less than or equal to the buffer zone width, between the array and the background circuitry, wherein the buffer zone further comprises a second density, which is less than the first density, and which is greater than the background density. |
地址 |
Hsin-Chu TW |