| 摘要 |
<p>The present invention relates to a low-temperature CMOS thin film transistor (TFT) structure and a manufacturing method thereof. The present invention reduces a contact resistance and a source and drain serial resistance due to the structural problem of a source and a drain and an existing manufacturing process by providing a method for manufacturing a low-temperature CMOS polycrystalline silicon thin film transistor, which includes the steps of: forming n+ and p+ polycrystalline silicon, metal source, and drain structures of a CMOS TFT; forming the n+ and p+ polycrystalline silicon and channel silicon at the same time; and forming source and drain metal before the n+ and p+ source and drain polycrystalline silicon are formed in the source and drain formation process to prevent the increase of the contact resistance of the source and the drain and the source and drain serial resistance generated in the structure and the manufacturing process of a transistor when the source and drain of the CMOS TFT is formed.</p> |
