APPARATUS FOR MANUFACTURING EPITAXIAL WAFER

摘要

Provided is an apparatus for manufacturing an epitaxial wafer. The apparatus for manufacturing an epitaxial wafer includes: a susceptor having a top surface on which a wafer is mounted; a heater disposed below the susceptor to supply a heat necessary for growing an epitaxial layer on a main surface of the wafer; and a hollow-type low middle side reflector interposed between the heater and the susceptor to allow the heat radiated from the heater to pass through a low surface of the susceptor, wherein the hollow-type low middle side reflector includes an inner protrusion having a shape to reflect the heat from the heater toward the low surface of the susceptor such that the uniformity of the epitaxial layer is equal to or less than 2%.