Edge-emitting semiconductor laser

摘要

An edge emitting semiconductor laser comprising an active, radiation-generating zone (1), and an common waveguide (8), which is suitable for guiding the radiation generated in the active zone (1) within the semiconductor laser. The common waveguide (8) comprises a first n-doped layer (4) and a second n-doped layer (5), which is arranged between the first n-doped layer (4) and the active zone (1), wherein the refractive index n2 of the second n-doped layer (5) is greater than the refractive index n1 of the first n-doped layer (4) by a value dn.

主权项

1. An edge emitting semiconductor laser comprising:
an active layer having a radiation-generating zone; and a common waveguide configured to guide the radiation generated in the active zone within the semiconductor laser, wherein the common waveguide comprises a first n-doped layer and a second n-doped layer; wherein the second n-doped layer is arranged between the first n-doped layer and the active layer; wherein a refractive index n2 of the second n-doped layer is greater than a refractive index n1 of the first n-doped layer by a value dn, and wherein the common waveguide has a single p-doped layer, the thickness of which is not greater than 10% of the thickness of the common waveguide.