Solid-state image sensor, method of manufacturing the same and camera

摘要

An image sensor includes a semiconductor layer having first and second faces, and a wiring structure arranged on a side of the first face, wherein photoelectric converters are arranged in the semiconductor layer and light is incident on the second face. The wiring structure includes reflection portions having reflection regions and arranged for at least some of the photoelectric converters, absorbing portions arranged around the reflection regions, an insulator portion arranged to surround the absorbing portions, and an interlayer insulating film arranged between the first face and a group of the reflection portions, the light absorbing portions, and the insulator portion, and a reflectance of the light absorbing portions is smaller than a reflectance of the reflection regions, and a light transmittance of the light absorbing portions is smaller than a light transmittance of the insulator portion.

主权项

1. A solid-state image sensor comprising:
a semiconductor layer having a first face and a second face; and a wiring structure arranged on a side of the first face, wherein a plurality of photoelectric converters are arranged in the semiconductor layer, wherein light from an object is incident on the second face, wherein the wiring structure includes: a plurality of reflection portions arranged for at least some of the plurality of photoelectric converters, each of the plurality of reflection portions having a reflection region; a plurality of light absorbing portions each of which is arranged around the reflection region of corresponding one of the plurality of reflection portions; an insulator portion arranged to surround each of the plurality of light absorbing portions; and an interlayer insulating film arranged between the first face and a group of the plurality of reflection portions, the plurality of light absorbing portions, and the insulator portion, and wherein a reflectance of each of the plurality of light absorbing portions is smaller than a reflectance of the reflection region of corresponding one of the reflection portions, and a light transmittance of each of the plurality of light absorbing portions is smaller than a light transmittance of the insulator portion.