Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region

摘要

A masking layer is formed on a dielectric region of an electronic device so that, during subsequent formation of a capping layer on electrically conductive regions of the electronic device that are separated by the dielectric region, the masking layer inhibits formation of capping layer material on or in the dielectric region. The capping layer can be formed selectively on the electrically conductive regions or non-selectively; in either case, capping layer material formed over the dielectric region can subsequently be removed, thus ensuring that capping layer material is formed only on the electrically conductive regions. Silane-based materials, can be used to form the masking layer. The capping layer can be formed of an conductive material, a semiconductor material, or an insulative material, and can be formed using any appropriate process, including conventional deposition processes such as electroless deposition, chemical vapor deposition, physical vapor deposition or atomic layer deposition.

主权项

1. A method of forming a device, the method comprising:
providing a substrate, wherein the substrate comprises a dielectric region and a conductive region; selectively forming a molecular self-assembled monolayer on the dielectric region;
wherein the molecular self-assembled monolayer comprises head groups formed on the dielectric region, linking groups connected to the head groups, and terminal groups connected to the linking groups; forming a capping layer on the conductive region,
wherein the capping layer is an electrically conductive material comprising one of a cobalt alloy, a nickel alloy, tungsten, tantalum, or tantalum nitride, andwherein the capping layer is formed by one of a chemical vapor deposition (CVD) process or an atomic layer deposition (ALD) process; removing at least the terminal groups of the molecular self-assembled monolayer from the dielectric region,
wherein the removing of the at least the terminal groups of the molecular self-assembled monolayer from the dielectric region comprises removing the capping layer from the dielectric region,wherein at least the head groups of the molecular self-assembled monolayer remains and covers the dielectric region after the removing of the terminal groups; and forming a dielectric barrier layer over the dielectric region.