| 摘要 |
FIELD: physics.SUBSTANCE: method of formation of the array of quantum row of high density includes three stages. At the first stage the formation of germinal number of quantum points in the mode of submonolayer sedimentation occurs, i.e. consecutive sedimentation of several layers of intense material, the thickness of each of which doesn't exceed one monolayer, divided by layers of non-stressed material with the thickness of several monolayers. Quantum points of germinal row are of high density and large width of the forbidden zone. At the second stage the sedimentation of an intermediate layer of non- stressed material occurs. Its thickness is selected sufficiently small so that the stress fields which are formed from quantum points of germinal row can effect the migration of atoms on its surfaces. At the third stage the formation of inheriting row of quantum points by means of sedimentation of at least one layer of stressed material occurs the thickness of which exceeds the critical thickness of insular growth. The surface density of quantum points of the inheriting row is pre-determined by surface density of quantum points of germinal row and therefore is large. Meanwhile the width of the forbidden zone of quantum points of the inheriting row has the value, typical for the quantum points formed using traditional methods. For control of width of the forbidden zone the quantum points of the inheriting row can be covered with stressed quantum hole. The preferable material is InAs as a stress material, In(GaAl)As as an intense quantum hole (y is from 0.1 up to 0.3.), GaAs or AlGaAs (x does not exceed 0.4) as non-stressed material. The advantage of use of AlGaAs as non-stressed material is that at its use the width of the forbidden zone of quantum points of germinal row is additionally increased so they do not effect the optical characteristics of the formed array.EFFECT: possibility of formation of arrays of quantum points with the controlled wavelength of radiation.7 cl, 7 dwg |
