| 发明名称 | Gate driver | ||
| 摘要 | Disclosed herein is a gate driver. The gate driver according to an exemplary embodiment of the present invention includes: a first power switch sourcing current according to voltage applied by a voltage source; a second power switch connected with the first power switch in series and sinking current according to the voltage applied by the voltage source; and a speed booster receiving a voltage pulse from the outside to output peak current so as to make a turn on/off operation of the first power switch fast. As set forth above, according to the exemplary embodiments of the present invention, it is possible to improve the driving speed of the gate driver without increasing the current of the current source by further including the speed booster configured of the plurality of MOSFETs and the capacitor. | ||
| 申请公布号 | US8975927(B2) | 申请公布日期 | 2015.03.10 |
| 申请号 | US201313842163 | 申请日期 | 2013.03.15 |
| 申请人 | Samsung Electro-Mechanics Co., Ltd. | 发明人 | Hwang Jong Tae;Park Deuk Hee;Cha Sang Hyun;Lee Chang Seok;Lee Yun Joong |
| 分类号 | H03B1/00;H03K3/00;H03K17/04 | 主分类号 | H03B1/00 |
| 代理机构 | Bracewell & Giuliani LLP | 代理人 | Bracewell & Giuliani LLP ;Chin Brad Y. |
| 主权项 | 1. A gate driver, comprising: a first power switch sourcing current according to voltage applied by a voltage source; a second power switch connected with the first power switch in series and sinking current according to the voltage applied by the voltage source; a speed booster outputting peak current so as to make a turn on/off operation of the first power switch fast; and an amplifier amplifying current flowing in the first power switch side, wherein the speed booster is configured of a serial-parallel combination circuit of a plurality of MOSFETs and one capacitor. | ||
| 地址 | Gyeonggi-Do KR | ||