发明名称 Composition for polishing and composition for rinsing
摘要 A polishing composition for a silicon wafer and a rinsing composition for a silicon wafer according to the present invention contain a nonionic surfactant of a polyoxyethylene adduct. The HLB value of the polyoxyethylene adduct is 8 to 15. The weight-average molecular weight of the polyoxyethylene adduct is 1400 or less. The average number of moles of oxyethylene added in the polyoxyethylene adduct is 13 or less. The content of the polyoxyethylene adduct in each of the polishing composition and the rinsing composition is 0.00001 to 0.1% by mass.
申请公布号 US8974691(B2) 申请公布日期 2015.03.10
申请号 US201113824149 申请日期 2011.09.20
申请人 Fujimi Incorporated 发明人 Tsuchiya Kohsuke;Takahashi Shuhei
分类号 C09K13/06;H01L21/302;C09K13/00;B24B37/04;C09G1/02;H01L21/02;H01L21/306;C09K3/14 主分类号 C09K13/06
代理机构 Foley & Lardner LLP 代理人 Foley & Lardner LLP
主权项 1. A polishing composition for a silicon wafer, comprising: water; a basic compound; and a nonionic surfactant of a polyoxyethylene adduct selected from the group consisting of polyoxyethylene alkyl ether, polyoxyethylene phenyl ether, polyoxyethylene alkyl phenyl ether, polyoxyethylene alkylamide, polyoxyethylene fatty acid ester, polyoxyethylene sorbitol fatty acid ester, polyoxyethylene castor oil, and polyoxyethylene rosin ester, wherein the polyoxyethylene adduct has an HLB value of 8 to 15, the polyoxyethylene adduct has a weight-average molecular weight of 1400 or less, the polyoxyethylene adduct has an average number of moles of oxyethylene added of 13 or less, and the polyoxyethylene adduct is contained in the polishing composition in an amount of 0.00001 to 0.1% by mass.
地址 Kiyosu-shi JP