发明名称 Method for manufacturing a multilayered circuit board
摘要 A method for manufacturing a multilayered printed circuit board including forming a first insulating resin substrate having a metal layer substantially corresponding to dimensions of a semiconductor device, forming a second insulating resin substrate, forming a recess extending to the metal layer of the first insulating resin substrate such that a surface of the metal layer is exposed, accommodating the semiconductor device in the recess such that the semiconductor device is mounted on the surface of the metal layer, and forming a resin insulating layer on the first insulating resin substrate such that the semiconductor device accommodated in the recess is covered.
申请公布号 US8973259(B2) 申请公布日期 2015.03.10
申请号 US201113228496 申请日期 2011.09.09
申请人 Ibiden Co., Ltd. 发明人 Ito Sotaro;Takahashi Michimasa;Mikado Yukinobu
分类号 H05K3/30;H01L23/00;H01L23/538;H05K1/18;H01L25/10;H05K3/00;H05K3/46 主分类号 H05K3/30
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A method for manufacturing a multilayered printed circuit board, comprising: forming a first insulating resin substrate comprising a resin insulating layer and a metal layer formed on a surface of the resin insulating layer and substantially corresponding to dimensions of a semiconductor device; forming on the surface of the resin insulating layer a second insulating resin substrate comprising a resin insulating layer such that a first surface of the metal layer is covered by the resin insulating layer of the second insulating resin substrate; forming a recess extending from an opposite surface of the resin insulating layer of the first insulating resin substrate to the metal layer of the first insulating resin substrate such that a second surface of the metal layer opposite to the first surface is exposed; accommodating the semiconductor device in the recess formed in the first insulating resin substrate such that the semiconductor device is mounted on the second surface of the metal layer; and forming a resin insulating layer on the opposite surface of the resin insulating layer of the first insulating resin substrate such that the semiconductor device accommodated in the recess in the first insulating resin substrate is covered by the resin insulating layer on the opposite surface of the resin insulating layer of the first insulating resin substrate.
地址 Ogaki-shi JP