Method of manufacturing a semiconductor device comprising a membrane over a substrate by forming a plurality of features using local oxidation regions

摘要

In one embodiment, a method of manufacturing a semiconductor device includes oxidizing a substrate to form local oxide regions that extend above a top surface of the substrate. A membrane layer is formed over the local oxide regions and the top surface of the substrate. A portion of the substrate under the membrane layer is removed. The local oxide regions under the membrane layer is removed.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
oxidizing a substrate to form first local oxide regions, wherein the first local oxide regions include first portions extending into the substrate and second portions protruding above a top surface of the substrate, wherein oxidizing the substrate comprises depositing a masking layer and patterning the masking layer; forming a membrane layer over the first local oxide regions and the top surface of the substrate, wherein the membrane layer is formed around sidewalls of the second portions of the first local oxide regions; removing a portion of the substrate under the membrane layer; and removing the first local oxide regions under the membrane layer.