METHOD OF FABRICATING SPUTTERING TARGET

摘要

The present invention relates to a method of fabricating a sputtering target and, more specifically, to a method of fabricating a sputtering target capable of improving deposition efficiency. Provided is a method of fabricating a sputtering target which includes steps of: scattering indium(III) oxide (In2O3) powder, gallium oxide (Ga2O3) powder, and zinc oxide (ZnO) powder, respectively; mixing the scattered In2O3 powder, Ga2O3 powder, and ZnO powder to form slurry; forming the slurry into granulated powder; forming the granulated powder in to a formed body; and sintering the formed body to form a sintered body, wherein the formed body is sintered at a temperature ranging from 1,200-1,400°C.