| 摘要 |
<p>The present invention relates to a light emitting device. According to an embodiment of the present invention, the present invention includes: a first conductive semiconductor layer, a second conductive semiconductor layer which is disposed on the first conductive semiconductor layer; an active layer which is disposed between the first and second conductive semiconductor layers and includes well layers and partitions; and a carrier injection layer which is disposed between the second conductive semiconductor layer and the active layer and on which a second conductive dopant is doped. The last partition layer to be adjacent to the carrier injection layer among the partition layers includes at least a part having a larger energy band gap than the energy band gap of the remaining partition among the partitions.</p> |
