| 发明名称 |
Quantum efficiency of multiple quantum wells |
| 摘要 |
Improved quantum efficiency of multiple quantum wells. In accordance with an embodiment of the present invention, an article of manufacture includes a p side for supplying holes and an n side for supplying electrons. The article of manufacture also includes a plurality of quantum well periods between the p side and the n side, each of the quantum well periods includes a quantum well layer and a barrier layer, with each of the barrier layers having a barrier height. The plurality of quantum well periods include different barrier heights. |
| 申请公布号 |
US8975616(B2) |
申请公布日期 |
2015.03.10 |
| 申请号 |
US201213541559 |
申请日期 |
2012.07.03 |
| 申请人 |
|
发明人 |
Wang Liang;Mohammed Ilyas;Beroz Masud |
| 分类号 |
H01L29/06;H01L31/00;H01L33/06;H01L31/0352;H01L31/105;H01L33/24;H01S5/20;H01S5/34;H01S5/343;H01S5/32 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. An article of manufacture comprising:
a p side for supplying holes; an n side for supplying electrons; and a plurality of quantum well periods between said p side and said n side, each of said quantum well periods comprising a quantum well layer and a barrier layer, each said barrier layer having a barrier height, wherein said plurality of quantum well periods comprise different barrier heights, wherein each said barrier layer has a barrier layer p type doping concentration, and wherein said plurality of quantum well periods comprise different barrier layer p type doping concentrations. |
| 地址 |
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