发明名称 |
Method for manufacturing semiconductor device |
摘要 |
A method is provided for manufacturing a semiconductor device having a heat-resistant resin film with flip-chip connection structure using a solder bump or a gold bump and an epoxy resin compound laminated thereon, in which adhesiveness is improved particularly after exposure to high temperature and high humidity environments for a long period of time, thereby enhancing the reliability of the semiconductor device. The method, in accordance with the present invention, for manufacturing a semiconductor device having a heat-resistant resin film formed on a semiconductor element and an epoxy resin compound layer laminated thereon, comprises the steps of carrying out a plasma treatment on a surface of the heat-resistant resin film on which the epoxy resin compound layer is laminated using a nitrogen atom-containing gas containing at least one of nitrogen, ammonia, and hydrazine. |
申请公布号 |
US8975192(B2) |
申请公布日期 |
2015.03.10 |
申请号 |
US200612064511 |
申请日期 |
2006.08.22 |
申请人 |
Hitachi Chemical Dupont Microsystems Ltd. |
发明人 |
Kojima Yasunori;Itabashi Toshiaki |
分类号 |
C03C15/00;C03C25/68;C23F1/00;B44C1/22;H01L21/302;H01L21/461;H01L21/56;H01L23/31 |
主分类号 |
C03C15/00 |
代理机构 |
Griffin & Szipl, P.C. |
代理人 |
Griffin & Szipl, P.C. |
主权项 |
1. A method for manufacturing a semiconductor device with flip-chip connection structure using a solder bump or a gold bump having a heat-resistant resin film formed on a semiconductor element and an epoxy resin compound layer laminated thereon, the method comprising the steps of:
(a) providing a semiconductor device with flip-chip connection structure using the solder bump or a gold bump and having the heat-resistant resin film formed on the semiconductor element and the epoxy resin compound layer laminated thereon, wherein the heat-resistant resin film is a film including at least one of the compounds selected from the group consisting of polyimide, polyamide, polyamideimide, polybenzoxazole, polybenzoimidazole, benzocyclobutene, and a copolymer thereof, and wherein the epoxy resin compound layer is an underfill material, a film material, an adhesive, or a sealant; (b) carrying out a first plasma treatment on a surface of the heat-resistant resin film using oxygen or a mixed gas of oxygen and tetrafluoromethane; (c) carrying out a high frequency plasma treatment on a surface of the heat-resistant resin film on which the epoxy resin compound layer is laminated using a nitrogen gas, wherein the high frequency plasma treatment is a treatment for activating a gas at a bias voltage of a plasma treatment apparatus of −200 V or less and at a low substrate temperature of 200° C. or less in order to control the formation of a deteriorated layer; and (d) introducing a functional group of amide or amine to the surface of the heat-resistant film during the high frequency plasma treatment using the nitrogen gas. |
地址 |
Tokyo JP |