发明名称 | Solar cell element and method for manufacturing solar cell element | ||
摘要 | [Object] To provide a method for manufacturing a solar cell element including a semiconductor substrate that includes a high-concentration dopant layer located near the surface of the semiconductor substrate and a low-concentration dopant layer located more inside the semiconductor substrate than the high-concentration dopant layer.;[Solving Means] A method includes heating a semiconductor substrate having a first conductivity type in a first atmosphere which contains a dopant having a second conductivity type and which has a first dopant concentration; heating in a second atmosphere the semiconductor substrate heated in the first atmosphere, the second atmosphere having a second dopant concentration less than the first dopant concentration; and heating in a third atmosphere the semiconductor substrate heated in the second atmosphere, the third atmosphere having a third dopant concentration greater than the second dopant concentration. | ||
申请公布号 | US8975172(B2) | 申请公布日期 | 2015.03.10 |
申请号 | US200712443421 | 申请日期 | 2007.09.27 |
申请人 | KYOCERA Corporation | 发明人 | Yatabe Rui;Kurobe Kenichi;Inomata Yosuke |
分类号 | H01L31/18;H01L21/223;H01L31/068;H01L31/04;H01L21/18;H01L31/0224;H01L31/0236 | 主分类号 | H01L31/18 |
代理机构 | Procopio, Cory Hargreaves & Savitch LLP | 代理人 | Procopio, Cory Hargreaves & Savitch LLP |
主权项 | 1. A method for manufacturing a solar cell element, comprising: a first step of heating, at a temperature, T1, a semiconductor substrate having a first conductivity type in a first atmosphere which contains a dopant having a second conductivity type and which has a first dopant concentration, a second step of heating, at temperature, T2, in a second atmosphere the semiconductor substrate heated in the first atmosphere, the second atmosphere having a second dopant concentration less than the first dopant concentration; and a third step of heating, at temperature, T3, in a third atmosphere the semiconductor substrate heated in the second atmosphere, the third atmosphere having a third dopant concentration greater than the second dopant concentration, wherein the first conductivity type and the second conductivity type are different, and wherein T1<T3, T3<860° C., T1>600° C., T1<T3-30, and T1 and T3 are in units of degrees Celsius. | ||
地址 | Kyoto JP |