Method for the formation of fin structures for FinFET devices

摘要

A SOI substrate layer formed of a silicon semiconductor material includes adjacent first and second regions. A portion of the silicon substrate layer in the second region is removed such that the second region retains a bottom portion made of the silicon semiconductor material. An epitaxial growth of a silicon-germanium semiconductor material is made to cover the bottom portion. Germanium is then driven from the epitaxially grown silicon-germanium material into the bottom portion to convert the bottom portion to silicon-germanium. Further silicon-germanium growth is performed to define a silicon-germanium region in the second region adjacent the silicon region in the first region. The silicon region is patterned to define a first fin structure of a FinFET of a first (for example, n-channel) conductivity type. The silicon-germanium region is also patterned to define a second fin structure of a FinFET of a second (for example, p-channel) conductivity type.

主权项

1. A method, comprising:
in a substrate layer formed of a first semiconductor material and having a first region which is adjacent to a second region, removing a portion of first semiconductor material of the substrate layer in the second region, said second region retaining a bottom portion made of said first semiconductor material; epitaxially growing a second semiconductor material covering the bottom portion; converting the bottom portion made of said first semiconductor material into said second semiconductor material so that the first region is defined by the first semiconductor material and second region is defined by the second semiconductor material; patterning the first semiconductor material in the first region to define a first fin structure of a FinFET transistor of a first conductivity type; and patterning the second semiconductor material in the second region to define a second fin structure of a FinFET transistor of a second conductivity type.