发明名称 Method of manufacture of multilayer film
摘要 A process for producing a multilayer film which, even when bent, is less apt to decrease in barrier property or electrical conductivity. The process comprises forming a barrier film and a transparent conductive film on a resin film to produce a multilayer film. The barrier film is formed by a plasma enhanced CVD method which uses electric discharge between rolls. The transparent conductive film is preferably formed by physical vapor deposition. The resin film preferably is a polyester resin film or a polyolefin resin film.
申请公布号 US8974872(B2) 申请公布日期 2015.03.10
申请号 US201013503806 申请日期 2010.10.26
申请人 Sumitomo Chemical Company, Limited 发明人 Hasegawa Akira;Kuroda Toshiya;Sanada Takashi
分类号 H05H1/24;C23C16/50;C23C14/08;C23C14/56;H01L51/00;H01L51/52;C23C16/40;C23C16/503;C23C16/54 主分类号 H05H1/24
代理机构 Sughrue Mion, PLLC 代理人 Sughrue Mion, PLLC
主权项 1. A method comprising: manufacturing a multilayer film by forming a barrier film containing silicon, oxygen, and carbon and a transparent conductive film on a resin film, wherein said barrier film is formed by a plasma enhanced CVD method which uses electric discharge between two rolls in which two magnets are provided respectively under a pressure of 0.1 Pa to 10 Pa in a condition where an intermediate frequency is applied between the rolls where a magnetic field is formed, and an organic silicon compound and oxygen are introduced as film formation gas to the rolls where the intermediate frequency is applied to form high-density plasma between the rolls wherein the two rolls each contain therein one of the two magnets.
地址 Tokyo JP