发明名称 |
Method of manufacture of multilayer film |
摘要 |
A process for producing a multilayer film which, even when bent, is less apt to decrease in barrier property or electrical conductivity. The process comprises forming a barrier film and a transparent conductive film on a resin film to produce a multilayer film. The barrier film is formed by a plasma enhanced CVD method which uses electric discharge between rolls. The transparent conductive film is preferably formed by physical vapor deposition. The resin film preferably is a polyester resin film or a polyolefin resin film. |
申请公布号 |
US8974872(B2) |
申请公布日期 |
2015.03.10 |
申请号 |
US201013503806 |
申请日期 |
2010.10.26 |
申请人 |
Sumitomo Chemical Company, Limited |
发明人 |
Hasegawa Akira;Kuroda Toshiya;Sanada Takashi |
分类号 |
H05H1/24;C23C16/50;C23C14/08;C23C14/56;H01L51/00;H01L51/52;C23C16/40;C23C16/503;C23C16/54 |
主分类号 |
H05H1/24 |
代理机构 |
Sughrue Mion, PLLC |
代理人 |
Sughrue Mion, PLLC |
主权项 |
1. A method comprising:
manufacturing a multilayer film by forming a barrier film containing silicon, oxygen, and carbon and a transparent conductive film on a resin film, wherein said barrier film is formed by a plasma enhanced CVD method which uses electric discharge between two rolls in which two magnets are provided respectively under a pressure of 0.1 Pa to 10 Pa in a condition where an intermediate frequency is applied between the rolls where a magnetic field is formed, and an organic silicon compound and oxygen are introduced as film formation gas to the rolls where the intermediate frequency is applied to form high-density plasma between the rolls wherein the two rolls each contain therein one of the two magnets. |
地址 |
Tokyo JP |