发明名称 Insert carrier and method for the simultaneous double-side material-removing processing of semiconductor wafers
摘要 An insert carrier is configured to receive at least one semiconductor wafer for double-side processing of the wafer between two working disks of a lapping, grinding or polishing process. The insert carrier includes a core of a first material that has a first surface and a second surface, and at least one opening configured to receive a semiconductor wafer. A coating at least partially covers the first and second surfaces of the core. The coating includes a surface remote from the core that includes a structuring including elevations and depressions. A correlation length of the elevations and depressions is in a range of 0.5 mm to 25 mm and an aspect ratio of the structuring is in a range of 0.0004 to 0.4.
申请公布号 US8974267(B2) 申请公布日期 2015.03.10
申请号 US201113311575 申请日期 2011.12.06
申请人 Siltronic AG 发明人 Pietsch Georg;Kerstan Michael
分类号 B24B1/00;B24B37/28 主分类号 B24B1/00
代理机构 Leydig, Voit & Mayer, Ltd. 代理人 Leydig, Voit & Mayer, Ltd.
主权项 1. An insert carrier configured to receive at least one semiconductor wafer for double-side processing of the wafer between two working disks of a lapping, grinding or polishing process, the insert carrier comprising: a core including a first material and having a first surface and a second surface; at least one opening configured to receive a semiconductor wafer; and a coating at least partially covering the first and second surfaces of the core, the coating including a surface remote from the core that includes a structuring including a multiplicity of elevations and depressions distributed in a pattern across the coating such that a correlation length of the elevations and depressions is in a range of 0.5 mm to 25 mm, and wherein an aspect ratio of the structuring is in a range of 0.0004 to 0.4.
地址 Munich DE