发明名称 |
Electrostatic discharge blocking circuits |
摘要 |
Techniques and architectures corresponding to electrostatic discharge blocking circuits are described. |
申请公布号 |
US8976496(B2) |
申请公布日期 |
2015.03.10 |
申请号 |
US201012975069 |
申请日期 |
2010.12.21 |
申请人 |
Infineon Technologies AG |
发明人 |
Russ Christian;Soldner Wolfgang;Langguth Gernot;Alvarez David;Domanski Krzysztof;von Arnim Klaus |
分类号 |
H02H9/04;H02H3/22;H02H3/20 |
主分类号 |
H02H9/04 |
代理机构 |
SpryIP, LLC |
代理人 |
SpryIP, LLC |
主权项 |
1. A circuit arrangement for electrostatic discharge protection comprising:
a MOS buffer transistor configured to receive an input signal from a first functional circuit block at a gate of the MOS buffer transistor and to provide at least a portion of an output signal to a second functional circuit block; and a MOS blocking transistor coupled to the MOS buffer transistor, wherein a gate of the MOS blocking transistor is coupled to a supply voltage, and wherein a body terminal of the MOS blocking transistor and a body terminal of the MOS buffer transistor are coupled to another blocking transistor. |
地址 |
Neubiberg DE |