发明名称 Electrostatic discharge blocking circuits
摘要 Techniques and architectures corresponding to electrostatic discharge blocking circuits are described.
申请公布号 US8976496(B2) 申请公布日期 2015.03.10
申请号 US201012975069 申请日期 2010.12.21
申请人 Infineon Technologies AG 发明人 Russ Christian;Soldner Wolfgang;Langguth Gernot;Alvarez David;Domanski Krzysztof;von Arnim Klaus
分类号 H02H9/04;H02H3/22;H02H3/20 主分类号 H02H9/04
代理机构 SpryIP, LLC 代理人 SpryIP, LLC
主权项 1. A circuit arrangement for electrostatic discharge protection comprising: a MOS buffer transistor configured to receive an input signal from a first functional circuit block at a gate of the MOS buffer transistor and to provide at least a portion of an output signal to a second functional circuit block; and a MOS blocking transistor coupled to the MOS buffer transistor, wherein a gate of the MOS blocking transistor is coupled to a supply voltage, and wherein a body terminal of the MOS blocking transistor and a body terminal of the MOS buffer transistor are coupled to another blocking transistor.
地址 Neubiberg DE