Metal oxide semiconductor devices with multiple drift regions

摘要

A semiconductor device includes a semiconductor substrate of a first conductivity type, a buried layer a second conductivity type different from the first conductivity type on the substrate and an epitaxial layer of the second conductivity type on the buried layer. The device further includes a pocket well of the first conductivity type in the epitaxial layer, a first drift region in the epitaxial layer at least partially overlapping the pocket well, a second drift region in the epitaxial layer and spaced apart from the first drift region, and a body region of the first conductivity type in the pocket well. A gate electrode is disposed on the body region, the pocket well and the first drift region and has an edge overlying the epitaxial region between the first and second drift regions.

主权项

1. A semiconductor device comprising:
a semiconductor substrate of a first conductivity type; a buried layer of a second conductivity type different from the first conductivity type on the substrate; an epitaxial layer of the second conductivity type on the buried layer; a pocket well of the first conductivity type in the epitaxial layer; a first drift region in the epitaxial layer at least partially overlapping the pocket well; a second drift region in the epitaxial layer and spaced apart from the first drift region; a body region of the first conductivity type in the pocket well; and a gate electrode on the body region, the pocket well and the first drift region and having an edge overlying the epitaxial region between the first and second drift regions.