Methods of forming non-volatile memory devices having air gaps

摘要

Disclosed are non-volatile memory devices and methods of manufacturing the same. The non-volatile memory device includes device isolation patterns defining active portions in a substrate and gate structures disposed on the substrate. The active portions are spaced apart from each other in a first direction and extend in a second direction perpendicular to the first direction. The gate structures are spaced apart from each other in the second direction and extend in the first direction. Each of the device isolation patterns includes a first air gap, and each of a top surface and a bottom surface of the first air gap has a wave-shape in a cross-sectional view taken along the second direction.

主权项

1. A method of forming a non-volatile memory device, the method comprising:
forming device isolation patterns in a substrate to define active portions therein, the active portions being spaced apart from each other in a first direction and extending in a second direction that is perpendicular to the first direction; forming a plurality of gate patterns on the substrate, each of the plurality of gate patterns extending in the first direction and spaced apart from each other in the second direction to provide spaces between ones of the plurality of gate patterns; forming a layer on sidewalls of each of the plurality of gate patterns; and etching the device isolation patterns and the layer to form respective first gaps in the device isolation patterns, wherein the respective first gaps extend continuously in the second direction under adjacent ones of the plurality of gate structures.