发明名称 Integrated circuit packaging system with coreless substrate and method of manufacture thereof
摘要 A method of manufacture of an integrated circuit packaging system includes: forming a first metal layer on a carrier; forming an insulation layer directly on the first metal layer; exposing a portion of the first metal layer for directly attaching to a die interconnect connecting to an integrated circuit; forming a second metal layer directly on the insulation layer opposite the side of the insulation layer exposed by removing the carrier; and forming a protective layer directly on the insulation layer and the second metal layer, the protective layer exposing a portion of the second metal layer for directly attaching an external interconnect.
申请公布号 US8975665(B2) 申请公布日期 2015.03.10
申请号 US201313742580 申请日期 2013.01.16
申请人 STATS ChipPAC Ltd. 发明人 Jung JinHee;Roh YoungDal;Park KyoungHee
分类号 H01L23/52;H01L23/535;H01L21/768;H01L23/498 主分类号 H01L23/52
代理机构 Ishimaru & Associates LLP 代理人 Ishimaru & Associates LLP
主权项 1. A method of manufacture of an integrated circuit packaging system comprising: forming a first metal layer on a carrier, the first metal layer having a component attachment pad and a first redistribution layer; forming an insulation layer directly on the first metal layer, the insulation layer formed from a fiber fabric pre-impregnated with resin (PPG) material; exposing a portion of the first metal layer and a portion of the insulation layer by removing the carrier, the exposed portion of the component attachment pad and the first redistribution layer facing away from the insulation layer and coplanar with a component side of the insulation layer, and the exposed portion of the first meal layer for directly attaching to a die interconnect connecting to an integrated circuit; forming a second metal layer directly on the insulation layer opposite the side of the insulation layer exposed by removing the carrier, the second metal layer having a vertical interconnect within a vertical opening in the insulation layer, and the vertical interconnect directly on the first metal carrier; and forming a protective layer directly on the insulation layer and the second metal layer, the PPG material of the insulation layer and the second metal layer forming a mold lock with the protective layer for resisting delamination, and the protective layer exposing a portion of the second metal layer for directly attaching an external interconnect.
地址 Singapore SG