Asymmetrical bidirectional protection component

摘要

An asymmetrical bidirectional protection component formed in a semiconductor substrate of a first conductivity type, including: a first implanted area of the first conductivity type; a first epitaxial layer of the second conductivity type on the substrate and the first implanted area; a second epitaxial layer of the second conductivity type on the first epitaxial layer, the second layer having a doping level different from that of the first layer; a second area of the first conductivity type on the outer surface of the epitaxial layer, opposite to the first area; a first metallization covering the entire lower surface of the substrate; and a second metallization covering the second area.

主权项

1. An asymmetrical bidirectional protection component formed in a semiconductor substrate of a first conductivity type, comprising:
a first implanted area of the first conductivity type; a first epitaxial layer of a second conductivity type on the substrate and the first implanted area; a second epitaxial layer of the second conductivity type on the first epitaxial layer, the second epitaxial layer having a doping level different from that of the first epitaxial layer; a second implanted area of the first conductivity type on the outer surface of the second epitaxial layer, opposite to the first implanted area, wherein dopant concentrations of the first and second implanted areas are higher than dopant concentrations of the first and second epitaxial layers; a first metallization covering the entire lower surface of the substrate; and a second metallization covering the second implanted area.