发明名称 |
SOLAR CELL HAVING AN EMITTER REGION WITH WIDE BANDGAP SEMICONDUCTOR MATERIAL. |
摘要 |
<p>Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.</p> |
申请公布号 |
MX2014011246(A) |
申请公布日期 |
2015.03.09 |
申请号 |
MX20140011246 |
申请日期 |
2012.12.19 |
申请人 |
SUNPOWER CORPORATION |
发明人 |
SWANSON, RICHARD M.;BUENA, MARIUS M.;SMITH, DAVID D.;SHEN, YU-CHEN;COUSINS, PETER J.;DENNIS, TIM |
分类号 |
H01L31/042;H01L31/0236;H01L31/18 |
主分类号 |
H01L31/042 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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