发明名称 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE
摘要 <p>To suppress fluctuation in the threshold voltage of a transistor, to reduce the number of connections of a display panel and a driver IC, to achieve reduction in power consumption of a display device, and to achieve increase in size and high definition of the display device. A gate electrode of a transistor which easily deteriorates is connected to a wiring to which a high potential is supplied through a first switching transistor and a wiring to which a low potential is supplied through a second switching transistor; a clock signal is input to a gate electrode of the first switching transistor; and an inverted clock signal is input to a gate electrode of the second switching transistor. Thus, the high potential and the low potential are alternately applied to the gate electrode of the transistor which easily deteriorates.</p>
申请公布号 KR101499183(B1) 申请公布日期 2015.03.09
申请号 KR20140003375 申请日期 2014.01.10
申请人 发明人
分类号 G09F9/00;G09G3/20;G09G3/32;G09G3/36 主分类号 G09F9/00
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