| 摘要 |
<p>The method involves diffusing a doping agent, on a surface (2) of a wafer (1), with a thickness (e) to be virtually identical on its entire surface, where the thickness of the doping agent is 0.5 micrometer. The surface is etched to a depth (p) greater than the thickness, by soft etching process so as to form a matrix of separate doped zones (3). The surface is covered by a passivation layer (6). The surface is etched to create separation channels (4) of the doped zones, where the channels include sidewalls (5) converging toward a bottom of the channels.</p> |
