SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR FABRICATING THE SAME

摘要

Provided are a semiconductor device capable of reducing parasitic capacitance between adjacent conductive structures, and a method for fabricating the same. A method for fabricating a semiconductor device according to the present technique includes: a step of forming multiple conductive structures including a first conductive pattern on a substrate; a step of forming a protection spacer in the sidewall of the conductive structures; a step of forming a separation structure including an open part between the conductive structures; a step of forming a sacrificial spacer in the sidewall of the open part; a step of forming a second conductive pattern recessed in the open part on the sacrificial spacer; a step of forming an air gap by removing the sacrificial spacer; a step of forming a liner layer of capping the second conductive pattern and the air gap; a step of forming a third conductive pattern by the silicidation of the liner layer; and a step of forming a fourth conductive pattern on the third conductive pattern.