| 摘要 |
<p>The structure (1) has a first semiconductor zone (210) i.e. absorption zone, comprising a surface (201) to receive electromagnetic radiation. A second semiconductor zone (310) i.e. multiplication zone, stays in contact with a longitudinal face (301) of the first zone. A third semiconductor zone (410) i.e. collection zone, stays in contact with the second zone. A delimitation zone (510) has a fourth semiconductor zone surrounding the second zone. The fourth zone has a forbidden energy gap of energy higher than a major part of the second zone. An independent claim is also included for a method for manufacturing an avalanche photodiode-type semiconductor structure.</p> |
