| 发明名称 |
METHODS FOR FABRICATING INTEGRATED CIRCUITS USING CHEMICAL MECHANICAL PLANARIZATION TO RECESS METAL |
| 摘要 |
Methods for fabricating integrated circuits using chemical mechanical planarization (CMP) for recessing metal are provided. In an embodiment, a method for fabricating an integrated circuit includes filling a trench with a metal and forming an overburden portion of the metal outside of the trench. The method further includes performing a planarization process with an etching slurry to remove the overburden portion of the metal and to recess the metal within the trench. |
| 申请公布号 |
US2015064903(A1) |
申请公布日期 |
2015.03.05 |
| 申请号 |
US201314015640 |
申请日期 |
2013.08.30 |
| 申请人 |
International Business Machines Corporation ;GLOBALFOUNDRIES, Inc. |
发明人 |
Tanwar Kunaljeet;Zhang Xunyuan;Canaperi Donald;Patlolla Raghuveer |
| 分类号 |
H01L21/306 |
主分类号 |
H01L21/306 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating an integrated circuit, the method comprising:
filling a trench with a metal and forming an overburden portion of the metal outside of the trench; and performing a planarization process with an etching slurry to remove the overburden portion of the metal and to recess the metal within the trench. |
| 地址 |
Armonk NY US |
